Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Amorphous Ga2O3 Semiconductor: A New Solution for Robust X‐Ray Dosimeters

Hang Shao, Jiahao Zou, Huili Liang, Rui Zhu, Yonghui Zhang, Xiaozhi Zhan, Tao Zhu, Jihua Zhang, Yuan Li, Guangyu Zhang and Zengxia Mei
Advanced Functional Materials 35 (24) (2025)
https://doi.org/10.1002/adfm.202421730

Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors

Camilla Bordoni, Andrea Ciavatti, Mariana Cortinhal, Maria Pereira, Tobias Cramer, Pedro Barquinha and Beatrice Fraboni
APL Materials 12 (3) (2024)
https://doi.org/10.1063/5.0189167

Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters

Amal Mohamed Ahmed Ali, Naser M. Ahmed, Norlaili A. Kabir, Mohammed Khalil Mohammed Ali, Hanan Akhdar, Osamah A. Aldaghri, Khalid Hassan Ibnaouf and Abdelmoneim Sulieman
Applied Sciences 11 (23) 11258 (2021)
https://doi.org/10.3390/app112311258

Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy

Svetlana M. Pejovic, Milic M. Pejovic, Dragan Stojanov and Olivera Ciraj-Bjelac
Radiation Protection Dosimetry 168 (1) 33 (2016)
https://doi.org/10.1093/rpd/ncv006

Characterization of MOSFET dosimeters for low‐dose measurements in maxillofacial anthropomorphic phantoms

Juha H. Koivisto, Jan E. Wolff, Timo Kiljunen, Dirk Schulze and Mika Kortesniemi
Journal of Applied Clinical Medical Physics 16 (4) 266 (2015)
https://doi.org/10.1120/jacmp.v16i4.5433

Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

Sebastián H. Carbonetto, Mariano A. Garcia Inza, José Lipovetzky, et al.
IEEE Transactions on Nuclear Science 58 (6) 3348 (2011)
https://doi.org/10.1109/TNS.2011.2170430

Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment

F. Ravotti, M. Glaser, F. Saigné, L. Dusseau and G. Sarrabayrouse
Applied Physics Letters 89 (8) (2006)
https://doi.org/10.1063/1.2337084